Vertical-Injection AlGaInP LEDs with n-AlGaInP Nanopillars Fabricated by Self-Assembled ITO-Based Nanodots

Vertical-Injection AlGaInP LEDs with n-AlGaInP Nanopillars Fabricated by Self-Assembled ITO-Based Nanodots

The light output power of AlGaInP-based vertical-injection light-emitting diodes (VI-LEDs) can be enhanced significantly using n-AlGaInP nanopillars. n-AlGaInP nanopillars, ~200 nm in diameter, were produced using SiO2 nanopillars as an etching mask, which were fabricated from self-assembled tin-doped indium oxide (ITO)-based nanodots formed by the wet etching of as-deposited ITO films. The AlG...

AlGaInP light-emitting diodes with SACNTs as current-spreading layer

Transparent conductive current-spreading layer is important for quantum efficiency and thermal performance of light-emitting diodes (LEDs). The increasing demand for tin-doped indium oxide (ITO) caused the price to greatly increase. Super-aligned carbon nanotubes (SACNTs) and Au-coated SACNTs as current-spreading layer were applied on AlGaInP LEDs. The LEDs with Au-coated SACNTs showed good cur...

Electron transport in AlGaInP quantum well lasers

AlGaInP laser diodes incorporating a 3λ/4 multiple quantum barrier

Self Assembled Monolayers on Inkjet-Printed ITO

and Introduction: Ink-jet printing allows for cost efficient roll-to-roll manufacture of thin-film transistors (TFTs) over large areas, enabling next-generation transparent displays, touch panels, opto-electronics, and radio frequency identification [1-4]. TFT conductance and cutoff frequency scale inversely with gate length. However sub-micron gate lengths are incompatible with traditional pri...